HY5012 300A 125V THÁO MÁY

HY5012 300A 125V THÁO MÁY, HY5012 300A 125V siêu chip lớn có thể thay thế RU1H300Q HY5608 THÔNG SỐ DỮ LIỆU XEM Ở ĐÂY:https://datasheetspdf.com/pdf/1269423/HOOYI/HY5012W/1 N-Channel Enhancement Mode MOSFET Feature HY5012W/A Absolute Maximum Ratings Sym bol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diod e Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 17 5 55 to 175 300 IDM Pulsed Drain Curre nt * ID Continuous Drain Current PD Max imum Power Dissipation RθJC Thermal Re sistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanc he Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1100** 300 196 500 250 0. 3 40 EAS Avalanc .